The Resource 16th International Conference on Microscopy of Semiconducting Materials : 17-20 March 2009, University of Oxford, United Kingdom, (electronic resource)

16th International Conference on Microscopy of Semiconducting Materials : 17-20 March 2009, University of Oxford, United Kingdom, (electronic resource)

Label
16th International Conference on Microscopy of Semiconducting Materials : 17-20 March 2009, University of Oxford, United Kingdom
Title
16th International Conference on Microscopy of Semiconducting Materials
Title remainder
17-20 March 2009, University of Oxford, United Kingdom
Title variation
Sixteenth International Conference on Microscopy of Semiconducting Materials
Creator
Contributor
Subject
Genre
Language
eng
Member of
Cataloging source
MUU
Illustrations
illustrations
Index
no index present
Literary form
non fiction
http://bibfra.me/vocab/lite/meetingDate
2009
http://bibfra.me/vocab/lite/meetingName
Conference on Microscopy of Semiconducting Materials
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
Royal Microscopical Society (Great Britain)
Series statement
Journal of physics conference series
Series volume
v. 209
http://library.link/vocab/subjectName
  • Semiconductors
  • Microscopy
  • Materials
  • Electron microscopy
  • Epitaxy
  • High resolution electron microscopy
Label
16th International Conference on Microscopy of Semiconducting Materials : 17-20 March 2009, University of Oxford, United Kingdom, (electronic resource)
Instantiates
Publication
Note
  • Title from webpage of ebook (IOP, viewed July 12, 2010)
  • "The meeting was organised under the auspices of the Royal Microscopical Society ... This conference series focuses on the most recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution"--Preface
Bibliography note
Includes bibliographical references and indexes
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
16th International Conference on Microscopy of Semiconducting Materials -- Peer review statement -- Author index -- Subject index -- GaN devices based on nanorods -- Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors -- Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays -- Exploring semiconductor quantum dots and wires by high resolution electron microscopy -- Quantitative Z-contrast atomic resolution studies of semiconductor nanostructured materials -- On the incorporation of indium in InAs-based quantum structures -- STEM-EELS investigations of high-k dielectrics -- Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy -- Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy -- Structural properties of GaN nanowires and GaN/AlN insertions grown by molecular beam epitaxy -- GaN, AlGaN, HfO2 based radial heterostructure nanowires -- Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography -- Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature -- Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS -- Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors -- Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity -- Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN[subscript x] and AlGaN layers -- Simulation supported analysis of the effect of SiN[subscript x] interlayers in AlGaN on the dislocation density reduction -- The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials -- TEM characterization of catalyst- and mask-free grown GaN nanorods -- Scanning probe microscopy studies on the growth of palladium and nickel on GaN(0001) -- Lattice distortions in GaN thin films on (0001) sapphire -- Atomic ordering in intermetallic CoAl alloys epitaxially grown on GaAs (001) -- Existence or absence of bandgap bowing in II-VI ternary alloys: Comparison between common-anion and common-cation cases -- Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction -- Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography -- Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum -- Observation of carrier distribution in GaAs semiconductors using phase-shifting electron holography -- Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope -- Theoretical and experimental factors affecting measurements of semiconductor mean inner potentials -- Advantages of low beam energies in a TEM for valence EELS -- Through-focal HAADF-STEM of buried nanostructures -- Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy -- MOCVD growth mechanisms of ZnO nanorods -- Quantitative investigation of the onset of islanding in strained layer epitaxy of InAs/GaAs by X-ray mapping in STEM -- Study of annealed InAs/GaAs quantum dot structures -- TEM studies of multilayered In[subscript 0.33]Ga[subscript 0.67]As quantum dots -- Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy -- Structure and luminescence of sol-gel synthesized anatase nanoparticles -- Ab initio based atomic scattering amplitudes and electron structure factors of In[subscript x]Ga[subscript 1-x]As/GaAs quantum wells -- Structure of an incommensurate 90° Si grain boundary resolved with the help of a Cs-corrector for illumination -- Structural properties of annealed SiO[subscript x] -- Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM -- STEM EDX applications for arsenic dopant mapping in nanometer scale silicon devices -- Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas -- Electron tomography of gate-all-around nanowire transistors -- Characterization of a FinFET 6T-SRAM cell by tomography -- InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope -- Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth -- Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy -- Specimen preparation for off-axis electron holography using focused ions, energy filters and laser beams -- Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices -- Energy filtered scanning electron microscopy: Applications to dopant contrast -- Progress towards quantitative dopant profiling in the SEM -- The chemisorption of oxygen and its effect on the secondary electron emission from doped semiconductors -- Characterization of ytterbium silicide formed in ultra high vacuum -- Chemical analysis of nickel silicides with high spatial resolution by combined EDS, EELS and ELNES -- Evolution of the interface structure of bonded Si wafers after high temperature annealing -- Evolution of porous silicon crystal structure during storage in ambient air -- Ge nanocrystals in alumina matrix: A structural study -- TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology -- Off-axis electron holography of Si semiconductors prepared using FIB milling -- Improved accuracy in nano beam electron diffraction -- Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography -- Reliability study on green InGaN/GaN light emitting diodes -- Temperature dependence of Ga-assisted oxide desorption on GaAs(001) -- The impact of ScO[subscript x]N[subscript y] interlayers on unintentional doping and threading dislocations in GaN -- Progress towards site-specific dopant profiling in the scanning electron microscope -- Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system -- Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal
Control code
665146538
Extent
1 online resource
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)665146538
Label
16th International Conference on Microscopy of Semiconducting Materials : 17-20 March 2009, University of Oxford, United Kingdom, (electronic resource)
Publication
Note
  • Title from webpage of ebook (IOP, viewed July 12, 2010)
  • "The meeting was organised under the auspices of the Royal Microscopical Society ... This conference series focuses on the most recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution"--Preface
Bibliography note
Includes bibliographical references and indexes
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
16th International Conference on Microscopy of Semiconducting Materials -- Peer review statement -- Author index -- Subject index -- GaN devices based on nanorods -- Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors -- Bridging the length scales between lithographic patterning and self assembly mechanisms in fabrication of semiconductor nanostructure arrays -- Exploring semiconductor quantum dots and wires by high resolution electron microscopy -- Quantitative Z-contrast atomic resolution studies of semiconductor nanostructured materials -- On the incorporation of indium in InAs-based quantum structures -- STEM-EELS investigations of high-k dielectrics -- Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy -- Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy -- Structural properties of GaN nanowires and GaN/AlN insertions grown by molecular beam epitaxy -- GaN, AlGaN, HfO2 based radial heterostructure nanowires -- Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography -- Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature -- Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS -- Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors -- Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity -- Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN[subscript x] and AlGaN layers -- Simulation supported analysis of the effect of SiN[subscript x] interlayers in AlGaN on the dislocation density reduction -- The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials -- TEM characterization of catalyst- and mask-free grown GaN nanorods -- Scanning probe microscopy studies on the growth of palladium and nickel on GaN(0001) -- Lattice distortions in GaN thin films on (0001) sapphire -- Atomic ordering in intermetallic CoAl alloys epitaxially grown on GaAs (001) -- Existence or absence of bandgap bowing in II-VI ternary alloys: Comparison between common-anion and common-cation cases -- Refinement of chemically sensitive structure factors using parallel and convergent beam electron nanodiffraction -- Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography -- Off axis holography of doped and intrinsic silicon nanowires: Interpretation and influence of fields in the vacuum -- Observation of carrier distribution in GaAs semiconductors using phase-shifting electron holography -- Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope -- Theoretical and experimental factors affecting measurements of semiconductor mean inner potentials -- Advantages of low beam energies in a TEM for valence EELS -- Through-focal HAADF-STEM of buried nanostructures -- Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy -- MOCVD growth mechanisms of ZnO nanorods -- Quantitative investigation of the onset of islanding in strained layer epitaxy of InAs/GaAs by X-ray mapping in STEM -- Study of annealed InAs/GaAs quantum dot structures -- TEM studies of multilayered In[subscript 0.33]Ga[subscript 0.67]As quantum dots -- Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy -- Structure and luminescence of sol-gel synthesized anatase nanoparticles -- Ab initio based atomic scattering amplitudes and electron structure factors of In[subscript x]Ga[subscript 1-x]As/GaAs quantum wells -- Structure of an incommensurate 90° Si grain boundary resolved with the help of a Cs-corrector for illumination -- Structural properties of annealed SiO[subscript x] -- Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM -- STEM EDX applications for arsenic dopant mapping in nanometer scale silicon devices -- Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas -- Electron tomography of gate-all-around nanowire transistors -- Characterization of a FinFET 6T-SRAM cell by tomography -- InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope -- Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth -- Observation of dopant profile of transistors using scanning nonlinear dielectric microscopy -- Specimen preparation for off-axis electron holography using focused ions, energy filters and laser beams -- Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices -- Energy filtered scanning electron microscopy: Applications to dopant contrast -- Progress towards quantitative dopant profiling in the SEM -- The chemisorption of oxygen and its effect on the secondary electron emission from doped semiconductors -- Characterization of ytterbium silicide formed in ultra high vacuum -- Chemical analysis of nickel silicides with high spatial resolution by combined EDS, EELS and ELNES -- Evolution of the interface structure of bonded Si wafers after high temperature annealing -- Evolution of porous silicon crystal structure during storage in ambient air -- Ge nanocrystals in alumina matrix: A structural study -- TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology -- Off-axis electron holography of Si semiconductors prepared using FIB milling -- Improved accuracy in nano beam electron diffraction -- Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography -- Reliability study on green InGaN/GaN light emitting diodes -- Temperature dependence of Ga-assisted oxide desorption on GaAs(001) -- The impact of ScO[subscript x]N[subscript y] interlayers on unintentional doping and threading dislocations in GaN -- Progress towards site-specific dopant profiling in the scanning electron microscope -- Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system -- Monte Carlo modelling of the low-loss electron signal in scanning electron microscopy and comparison with the BSE signal
Control code
665146538
Extent
1 online resource
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)665146538

Library Locations

  • St. Louis Mercantile LibraryBorrow it
    1 University Blvd, St. Louis, MO, 63121, US
    38.710138 -90.311107
  • Thomas Jefferson LibraryBorrow it
    1 University Blvd, St. Louis, MO, 63121, US
    38.710138 -90.311107
  • University ArchivesBorrow it
    703 Lewis Hall, Columbia, MO, 65211, US
  • University of Missouri-St. Louis Libraries DepositoryBorrow it
    2908 Lemone Blvd, Columbia, MO, 65201, US
    38.919360 -92.291620
  • University of Missouri-St. Louis Libraries DepositoryBorrow it
    2908 Lemone Blvd, Columbia, MO, 65201, US
    38.919360 -92.291620
  • Ward E Barnes Education LibraryBorrow it
    8001 Natural Bridge Rd, St. Louis, MO, 63121, US
    38.707079 -90.311355
Processing Feedback ...