The Resource Development and analysis of ZnO-based semiconductor photodetectors for UV detection

Development and analysis of ZnO-based semiconductor photodetectors for UV detection

Label
Development and analysis of ZnO-based semiconductor photodetectors for UV detection
Title
Development and analysis of ZnO-based semiconductor photodetectors for UV detection
Creator
Author
Subject
Genre
Language
eng
Summary
The objective of this thesis is to develop ZnO-based semiconductor photodetectors for UV detection with low dark current, high responsivity, and fast response time. To achieve this objective, an understanding of carrier recombination and transport mechanisms of the devices is necessary by investigating their electrical properties and optical properties. The photoresponse under continuous wave excitation and pulse excitation along with the frequency photoresponse provide characterizations and useful mechanism information of the devices. These measurements are also helpful to the optimization of the structures in the UV detectors. In this thesis, various ZnO UV detectors are investigated, including ZnO photoconductors, metal-semiconductor-metal (MSM) ZnO photodetectors with Ohmic contacts, post-processed MSM ZnO photodetectors with Schottky contacts, and p-i-n ZnO photodetectors. Experimental data and analysis give four unique results: (1) Very high photoelectric gain was confirmed in ZnO photoconductors. Persistent photoconductivity was observed in these detectors, which is due to carriers trapped in surface states. (2) A high gain and high speed photo-detection was validated in ZnO MSM photodetectors with Ohmic contacts. (3) A extremely low dark current and very high UV-Visible rejection was observed in ZnO MSM photodetectors with Schottky contacts. (4) Two photocarrier processes were found for the first time in ZnO p-i-n photodetectors. Our results show that semiconductor photodetectors based on ZnO are a promising candidate for UV detection
Cataloging source
MUU
http://library.link/vocab/creatorDate
1976-
http://library.link/vocab/creatorName
Li, Linghui
Degree
Ph. D.
Dissertation note
Thesis
Dissertation year
2010.
Government publication
government publication of a state province territory dependency etc
Granting institution
University of Missouri--Columbia,
Index
no index present
Literary form
non fiction
Nature of contents
dictionaries
http://library.link/vocab/subjectName
  • Zinc oxide thin films
  • Semiconductors
  • Semiconductors
  • Ultraviolet radiation
  • Detectors
  • Semiconductor-metal boundaries
  • Nanowires
Label
Development and analysis of ZnO-based semiconductor photodetectors for UV detection
Instantiates
Publication
Contributor
Thesis advisor
Note
Advisor: Ping Yu, Ph. D
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier.
Content category
text
Content type code
txt
Content type MARC source
rdacontent.
Control code
872561801
Extent
1online resource (xiii, 132 pages)
Form of item
online
Media category
computer
Media MARC source
rdamedia.
Media type code
c
Specific material designation
remote
System control number
(OCoLC)872561801
Label
Development and analysis of ZnO-based semiconductor photodetectors for UV detection
Publication
Contributor
Thesis advisor
Note
Advisor: Ping Yu, Ph. D
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier.
Content category
text
Content type code
txt
Content type MARC source
rdacontent.
Control code
872561801
Extent
1online resource (xiii, 132 pages)
Form of item
online
Media category
computer
Media MARC source
rdamedia.
Media type code
c
Specific material designation
remote
System control number
(OCoLC)872561801

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