The Resource Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini
Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini
Resource Information
The item Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri-St. Louis Libraries.This item is available to borrow from 1 library branch.
Resource Information
The item Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri-St. Louis Libraries.
This item is available to borrow from 1 library branch.
- Summary
- This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature reviewDiscusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
- Language
- eng
- Extent
- 1 online resource (xi, 731 pages)
- Contents
-
- Machine generated contents note: 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE
- Isbn
- 9780123918598
- Label
- Molecular beam epitaxy : from research to mass production
- Title
- Molecular beam epitaxy
- Title remainder
- from research to mass production
- Statement of responsibility
- edited by Mohamed Henini
- Language
- eng
- Summary
- This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature reviewDiscusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
- Cataloging source
- OPELS
- Dewey number
- 621.381
- Illustrations
- illustrations
- Index
- index present
- LC call number
- QC611.6.M64
- LC item number
- M645 2013eb
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- http://library.link/vocab/relatedWorkOrContributorName
- Henini, Mohamed
- http://library.link/vocab/subjectName
-
- Molecular beam epitaxy
- Optoelectronic devices
- Semiconductors
- TECHNOLOGY & ENGINEERING
- TECHNOLOGY & ENGINEERING
- Molecular beam epitaxy
- Optoelectronic devices
- Semiconductors
- Label
- Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini
- Antecedent source
- unknown
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- multicolored
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
- Machine generated contents note: 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE
- Control code
- 819506983
- Dimensions
- unknown
- Extent
- 1 online resource (xi, 731 pages)
- File format
- unknown
- Form of item
- online
- Isbn
- 9780123918598
- Lccn
- 2012032168
- Level of compression
- unknown
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Other physical details
- illustrations (some color)
- http://library.link/vocab/ext/overdrive/overdriveId
- 404676
- Quality assurance targets
- not applicable
- Reformatting quality
- unknown
- Sound
- unknown sound
- Specific material designation
- remote
- System control number
- (OCoLC)819506983
- Label
- Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini
- Antecedent source
- unknown
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Color
- multicolored
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
- Machine generated contents note: 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE
- Control code
- 819506983
- Dimensions
- unknown
- Extent
- 1 online resource (xi, 731 pages)
- File format
- unknown
- Form of item
- online
- Isbn
- 9780123918598
- Lccn
- 2012032168
- Level of compression
- unknown
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Other physical details
- illustrations (some color)
- http://library.link/vocab/ext/overdrive/overdriveId
- 404676
- Quality assurance targets
- not applicable
- Reformatting quality
- unknown
- Sound
- unknown sound
- Specific material designation
- remote
- System control number
- (OCoLC)819506983
Subject
- Electronic book
- Molecular beam epitaxy
- Molecular beam epitaxy
- Optoelectronic devices -- Materials
- Optoelectronic devices -- Materials
- Semiconductors -- Materials
- Semiconductors -- Materials
- TECHNOLOGY & ENGINEERING -- Electronics | Digital
- TECHNOLOGY & ENGINEERING -- Electronics | Microelectronics
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.umsl.edu/portal/Molecular-beam-epitaxy--from-research-to-mass/QNcP0q3pMPI/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.umsl.edu/portal/Molecular-beam-epitaxy--from-research-to-mass/QNcP0q3pMPI/">Molecular beam epitaxy : from research to mass production, edited by Mohamed Henini</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.umsl.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.umsl.edu/">University of Missouri-St. Louis Libraries</a></span></span></span></span></div>
