The Resource The electric field strength dependence of neutron-induced defects in silicon P-N junctions, by Paul Edward Johnson

The electric field strength dependence of neutron-induced defects in silicon P-N junctions, by Paul Edward Johnson

Label
The electric field strength dependence of neutron-induced defects in silicon P-N junctions
Title
The electric field strength dependence of neutron-induced defects in silicon P-N junctions
Statement of responsibility
by Paul Edward Johnson
Creator
Author
Subject
Language
eng
Summary
"The effect of high electric field strengths (104 to 105 V/cm) present during neutron radiation on the neutron-induced defects is determined by utilizing the high electric field strength inherent in the emitter-base transistion region of an n-p-n transistor. A method is presented for the separation of neutron and gamma effects. Previous theoretical work on the ratio of base current increase to collector current decrease is applied to experimental data. The variations of the space-charge region volume damage introduction rate with neutron fluence and the average electric field strength are determined experimentally in order to obtain a measure of this effect. The dependence of the space-charge region volume damage introduction rate on neutron fluence is found empirically to be a power law relationship. The space-charge region volume damage introduction rate is shown empirically to also have a power law relationship with respect to the average electric field strength"--Abstract, page ii
Member of
Cataloging source
UMR
http://library.link/vocab/creatorDate
1944-
http://library.link/vocab/creatorName
Johnson, Paul Edward
Degree
M.S.
Dissertation year
1972.
Funding information
Supported by the United States Atomic Energy Commission and the Graduate Center for Materials Research of the University of Missouri-Rolla
Granting institution
University of Missouri--Rolla
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
  • theses
http://library.link/vocab/subjectName
  • Electric fields
  • Transistors
  • Energy dissipation
  • Gamma rays
Label
The electric field strength dependence of neutron-induced defects in silicon P-N junctions, by Paul Edward Johnson
Instantiates
Publication
Note
Vita
Bibliography note
Includes bibliographical references (pages 50-51)
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Control code
880396917
Extent
vi, 53 pages
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)880396917
Label
The electric field strength dependence of neutron-induced defects in silicon P-N junctions, by Paul Edward Johnson
Publication
Note
Vita
Bibliography note
Includes bibliographical references (pages 50-51)
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Control code
880396917
Extent
vi, 53 pages
Form of item
online
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)880396917

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