Coverart for item
The Resource Thick films : properties, technology, and applications, Michael I. Panzini, editor

Thick films : properties, technology, and applications, Michael I. Panzini, editor

Label
Thick films : properties, technology, and applications
Title
Thick films
Title remainder
properties, technology, and applications
Statement of responsibility
Michael I. Panzini, editor
Contributor
Subject
Genre
Language
eng
Member of
Cataloging source
YDXCP
Dewey number
621.3
Illustrations
illustrations
Index
index present
LC call number
TK7871.15.F5
LC item number
T385 2012
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
Panzini, Michael I
Series statement
  • Materials science and technologies
  • Electrical engineering developments
http://library.link/vocab/subjectName
  • Thick films
  • Electronics
  • TECHNOLOGY & ENGINEERING
  • Electronics
  • Thick films
Label
Thick films : properties, technology, and applications, Michael I. Panzini, editor
Instantiates
Publication
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction ""
  • ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction ""
  • ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate ""
  • ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth ""
  • ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation ""
Control code
832313462
Dimensions
unknown
Extent
1 online resource (x, 386 pages)
Form of item
online
Isbn
9781614704010
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)832313462
Label
Thick films : properties, technology, and applications, Michael I. Panzini, editor
Publication
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction ""
  • ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction ""
  • ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate ""
  • ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth ""
  • ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation ""
Control code
832313462
Dimensions
unknown
Extent
1 online resource (x, 386 pages)
Form of item
online
Isbn
9781614704010
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations
Specific material designation
remote
System control number
(OCoLC)832313462

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