The Resource Thick films : properties, technology, and applications, Michael I. Panzini, editor
Thick films : properties, technology, and applications, Michael I. Panzini, editor
Resource Information
The item Thick films : properties, technology, and applications, Michael I. Panzini, editor represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri-St. Louis Libraries.This item is available to borrow from 1 library branch.
Resource Information
The item Thick films : properties, technology, and applications, Michael I. Panzini, editor represents a specific, individual, material embodiment of a distinct intellectual or artistic creation found in University of Missouri-St. Louis Libraries.
This item is available to borrow from 1 library branch.
- Language
- eng
- Extent
- 1 online resource (x, 386 pages)
- Contents
-
- ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction ""
- ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction ""
- ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate ""
- ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth ""
- ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation ""
- Isbn
- 9781614704010
- Label
- Thick films : properties, technology, and applications
- Title
- Thick films
- Title remainder
- properties, technology, and applications
- Statement of responsibility
- Michael I. Panzini, editor
- Language
- eng
- Cataloging source
- YDXCP
- Dewey number
- 621.3
- Illustrations
- illustrations
- Index
- index present
- LC call number
- TK7871.15.F5
- LC item number
- T385 2012
- Literary form
- non fiction
- Nature of contents
-
- dictionaries
- bibliography
- http://library.link/vocab/relatedWorkOrContributorName
- Panzini, Michael I
- Series statement
-
- Materials science and technologies
- Electrical engineering developments
- http://library.link/vocab/subjectName
-
- Thick films
- Electronics
- TECHNOLOGY & ENGINEERING
- Electronics
- Thick films
- Label
- Thick films : properties, technology, and applications, Michael I. Panzini, editor
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction ""
- ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction ""
- ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate ""
- ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth ""
- ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation ""
- Control code
- 832313462
- Dimensions
- unknown
- Extent
- 1 online resource (x, 386 pages)
- Form of item
- online
- Isbn
- 9781614704010
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Other physical details
- illustrations
- Specific material designation
- remote
- System control number
- (OCoLC)832313462
- Label
- Thick films : properties, technology, and applications, Michael I. Panzini, editor
- Bibliography note
- Includes bibliographical references and index
- Carrier category
- online resource
- Carrier category code
-
- cr
- Carrier MARC source
- rdacarrier
- Content category
- text
- Content type code
-
- txt
- Content type MARC source
- rdacontent
- Contents
-
- ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction ""
- ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction ""
- ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate ""
- ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth ""
- ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation ""
- Control code
- 832313462
- Dimensions
- unknown
- Extent
- 1 online resource (x, 386 pages)
- Form of item
- online
- Isbn
- 9781614704010
- Media category
- computer
- Media MARC source
- rdamedia
- Media type code
-
- c
- Other physical details
- illustrations
- Specific material designation
- remote
- System control number
- (OCoLC)832313462
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.umsl.edu/portal/Thick-films--properties-technology-and/hYmtaBLPvps/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.umsl.edu/portal/Thick-films--properties-technology-and/hYmtaBLPvps/">Thick films : properties, technology, and applications, Michael I. Panzini, editor</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.umsl.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.umsl.edu/">University of Missouri-St. Louis Libraries</a></span></span></span></span></div>
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<div class="citation" vocab="http://schema.org/"><i class="fa fa-external-link-square fa-fw"></i> Data from <span resource="http://link.umsl.edu/portal/Thick-films--properties-technology-and/hYmtaBLPvps/" typeof="Book http://bibfra.me/vocab/lite/Item"><span property="name http://bibfra.me/vocab/lite/label"><a href="http://link.umsl.edu/portal/Thick-films--properties-technology-and/hYmtaBLPvps/">Thick films : properties, technology, and applications, Michael I. Panzini, editor</a></span> - <span property="potentialAction" typeOf="OrganizeAction"><span property="agent" typeof="LibrarySystem http://library.link/vocab/LibrarySystem" resource="http://link.umsl.edu/"><span property="name http://bibfra.me/vocab/lite/label"><a property="url" href="http://link.umsl.edu/">University of Missouri-St. Louis Libraries</a></span></span></span></span></div>
