The Resource Transport characteristics of amorphous semiconductors in the dilute carrier regime : a variable range hopping treatment, Naseer Abdulhamid Dari, (electronic resource)

Transport characteristics of amorphous semiconductors in the dilute carrier regime : a variable range hopping treatment, Naseer Abdulhamid Dari, (electronic resource)

Label
Transport characteristics of amorphous semiconductors in the dilute carrier regime : a variable range hopping treatment
Title
Transport characteristics of amorphous semiconductors in the dilute carrier regime
Title remainder
a variable range hopping treatment
Statement of responsibility
Naseer Abdulhamid Dari
Creator
Contributor
Thesis advisor
Subject
Genre
Language
eng
Summary
Overview -- Methodology -- Results and discussion -- Conclusion
Cataloging source
UMK
http://library.link/vocab/creatorDate
1983-
http://library.link/vocab/creatorName
Dari, Naseer Abdulhamid
Degree
M.S.
Dissertation year
2010.
Granting institution
Dept. of Physics. University of Missouri-Kansas City
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
  • theses
http://library.link/vocab/relatedWorkOrContributorDate
1972-
http://library.link/vocab/relatedWorkOrContributorName
Priour, Donald James
http://library.link/vocab/subjectName
  • Amorphous substances
  • Statistical physics
  • Thermal conductivity
  • Singular perturbations (Mathematics)
  • Hopping conduction
Label
Transport characteristics of amorphous semiconductors in the dilute carrier regime : a variable range hopping treatment, Naseer Abdulhamid Dari, (electronic resource)
Instantiates
Publication
Note
  • "A thesis in physics."
  • Advisor: Donald Priour
  • Vita
Antecedent source
not applicable
Bibliography note
Includes bibliographical references (page 55)
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
We survey the analytical methods which are used to find the conductivity of amorphous solids as a function of temperature, specifically the work done by N. F. Mott and Apsley et al. and we point out the problems with deriving such a relationship. We then develop a self consistent numerical system for calculating the charge occupancy factors, and apply it to a specific case of amorphous boron carbide, where positional disorder is introduced by incorporating random shifts in the positions and orientations of icosahedral clusters of boron and carbon atoms in an initially pristine rhombohedral arrangement of icosahedra. We find the transport characteristics to be most sensitive to the size of the icosahedral clusters relative to their mean separation, while it is robust with respect to disorder. In particular, the transport characteristics are only mildly affected (i.e. slightly diminished) by random displacements in the icosahedral positions, while they do not appear to be discernibly changed in the presence of even significant orientational disorder
Control code
798585022
Dimensions
unknown
Extent
1 online resource (63 pages)
File format
one file format
Form of item
online
Level of compression
mixed
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations (some color).
Quality assurance targets
not applicable
Specific material designation
remote
System control number
(OCoLC)798585022
System details
  • The full text of the thesis is available as an Adobe Acrobat .pdf file; Adobe Acrobat Reader required to view the file
  • Mode of access: World Wide Web
Label
Transport characteristics of amorphous semiconductors in the dilute carrier regime : a variable range hopping treatment, Naseer Abdulhamid Dari, (electronic resource)
Publication
Note
  • "A thesis in physics."
  • Advisor: Donald Priour
  • Vita
Antecedent source
not applicable
Bibliography note
Includes bibliographical references (page 55)
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
We survey the analytical methods which are used to find the conductivity of amorphous solids as a function of temperature, specifically the work done by N. F. Mott and Apsley et al. and we point out the problems with deriving such a relationship. We then develop a self consistent numerical system for calculating the charge occupancy factors, and apply it to a specific case of amorphous boron carbide, where positional disorder is introduced by incorporating random shifts in the positions and orientations of icosahedral clusters of boron and carbon atoms in an initially pristine rhombohedral arrangement of icosahedra. We find the transport characteristics to be most sensitive to the size of the icosahedral clusters relative to their mean separation, while it is robust with respect to disorder. In particular, the transport characteristics are only mildly affected (i.e. slightly diminished) by random displacements in the icosahedral positions, while they do not appear to be discernibly changed in the presence of even significant orientational disorder
Control code
798585022
Dimensions
unknown
Extent
1 online resource (63 pages)
File format
one file format
Form of item
online
Level of compression
mixed
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Other physical details
illustrations (some color).
Quality assurance targets
not applicable
Specific material designation
remote
System control number
(OCoLC)798585022
System details
  • The full text of the thesis is available as an Adobe Acrobat .pdf file; Adobe Acrobat Reader required to view the file
  • Mode of access: World Wide Web

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