Neutron and gamma irradiation effects on power semiconductor switches

Resource Information

The work Neutron and gamma irradiation effects on power semiconductor switches represents a distinct intellectual or artistic creation found in University of Missouri-St. Louis Libraries. This resource is a combination of several types including: Work, Language Material, Books.

Label

Neutron and gamma irradiation effects on power semiconductor switches

Statement of responsibility

G.E. Schwarze and A.J. Frasca ; prepared for the 25th Intersociety Energy Conversion Engineering Conference, cosponsored by the AIChE, ANS, SAE, ACS, AIAA, ASME, and IEEE, Reno, Nevada, August 12-17,1990

Creator

• Schwarze, Gene E

Contributor

• United States, National Aeronautics and Space Administration
• Frasca, A. J

Subject

• Electronic government information -- United States
• Field effect transistors
• Gamma rays
• Government publications -- United States
• Irradiation
• Junction transistors
• Metal oxide semiconductors
• Neutron irradiation
• Radiation dosage
• Radiation shielding
• Radiation tolerance
• Semiconductor switches -- Materials | Effect of radiation on
• Semiconductors (materials)
• Switches
• Bipolar transistors

Genre

• Government publications
• Electronic government information

Language

eng

Member of

• NASA technical memorandum, 103200

Additional physical form

Also available via Internet from the NASA Technical Report Server web site. Address as of 4/7/05: http://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19900015962%5F1990015962.pdf; current access available via PURL.

Cataloging source

OKX

Government publication

federal national government publication

Illustrations

illustrations

Index

no index present

Literary form

non fiction

Nature of contents

• bibliography
• technical reports

Series statement

NASA technical memorandum

Series volume

103200